18.9% efficient silicon solar cell with laser doped emitter

A new record in laser doped solar cells with an efficiency ¿ = 18.9% is here reported. The ipe laser doping process allows for the fabrication of emitters of silicon solar cells via liquid state diffusion of predeposited dopant layers. Laser doping of sputtered phosphorus precursors results in an open circuit voltage V_oc = 677 mV, thus, ipe laser doping is comparable to furnace diffusion.