Superior contact properties of trench filled contact for 3D MOSFET

In this paper, we examined the applicability of the trench filled contact technique for the self-aligned dual metal contact for 3D MOSFET through both experiments and simulation. The proposed contact technique has the lower parasitic resistance and capacitance compared with the conventional silicide and with the elevated source/drain structure. Using this technique, the ITRS requirement for the source/drain contact resistance can be satisfied.