A novel nanoscale tunnel FET structure for increasing on/off current ratio

In this paper, we have shown that off-state current in the tunneling field effect transistor (TFET) can be reduced dramatically by using an ¿asymmetric¿ gate oxide thickness and employing gate work function engineering. This procedure does not affect driving current while reduces I_off by 5 orders magnitude, hence obtained the noticeable of I_on/I_off ratio. We discuss optimization of I_on/I_off ratio and investigate the effect of scaling on the I_on/I_off ratio in the proposed structure.