Study of magnesium doped gallium nitride films grown by low pressure-metalorganic chemical vapor deposition

We present results of room temperature and low temperature photoluminescence (PL) measurements of GaN:Mg grown by low pressure metalorganic chemical vapor deposition. The effect on these PL measurements with different Mg concentrations was investigated. The luminescence from p-type Mg-doped samples is dominated by shallow-donor-shallow-acceptor pair recombination and by deep blue centers at 3.0 eV. The X-ray pattern shows that the p-GaN layers grow with (0002) preferential orientation. The GaN:Mg layers thermal annealing does not show significant changes in PL and Hall effect measurements.