Noise analysis of inductive shunt-series feedback technique used in ultra-wideband low noise amplifier

An ultra-wideband 0.1-12-GHz low noise amplifier employing an inductive feedback technique is implemented in this paper. Adopting the technique, the designed amplifier achieves the wideband input matching, sufficient power gain, and effective suppression of noise at the high frequency. Therefore, a comprehensive noise analysis in the circuit is executed using equivalent circuit model in this study. Using foundry 0.13 ¿m CMOS process, the amplifier consumes 30 mW power and occupies 0.356 mm² chip area. Afterward, the RF measure shows that the power gain (S₂₁) is 10.6 dB, input and output return loss is smaller than -10 dB, the 3-dB bandwidth is 12 GHz, and the noise figure is less than 5 dB over the operation band.