The stochastic based inductance model of the OTA-based inductor

In this research, the model which describes the effect of the stochastic nature of the bias current to the inductance of the OTA-based inductor has been proposed. The model has been found to provide the complete probabilistic distribution information of the resulting inductance with sufficient accuracy. This research has been performed based upon the up to dated CMOS technology. The proposed model is promisingly applicable to the OTA-based inductor of any topologies constructed based upon any OTA. Hence, it has been found to be a convenience tool for the design of various applications of the OTA-based inductor.