Electron-beam lithographed metamaterial devices operating in the terahertz region

Direct electron-beam lithography (EBL) was exploited to fabricate metamaterial devices operating in the terahertz (THz) region. Simulation show that, in order to reach the required frequency range, optimized metallic structures deposited on silicon must have submicron features. The effect of an external parameter, such as the substrate doping, is also studied.