A versatile compact model for ballistic 1D transistor: Applications to GNRFET and CNTFET

This paper presents a versatile compact model dedicated to ballistic ID transistors that are fabricated in very advanced technologies, in order to predict the ultimate performances of novel nano-device-based circuits. The results presented here after are related to MOS like CNTFET and GNRFET thanks to a unified expression of the non parabolic energy dispersion relation NPEDR which enhances other tentative works limited to the parabolic case and to Boltzmann approximation. To warrant the accuracy as well as the flexibility of this compact model for ballistic ID transistor, we have developed a thermionic charge model based on NPEDR.