Characterization of 1/f noise in scaled high-K NMOS transistors and SONOS nonvolatile semiconductor memory (NVSM) devices

We have performed 1/f noise characterizations on both scaled high-K, metal-gate, NMOS transistors and NSONOS NVSMs. Experimental results indicate a trap density in high-K NMOS devices, which is several orders of magnitude higher than NSONOS NVSMs. The increased 1/f noise in high-K devices remains a reliability issue for device engineering and circuit design.