Double-self-aligned short-channel power DMOSFETs in 4H-SiC

Silicon carbide power DMOSFETs have made significant advances in recent years [1, 2], demonstrating blocking voltages as high as 10 kV and absolute on-currents greater than 20 A on a single device [3]. As currents and voltages have increased, there has been a simultaneous effort to reduce the specific on-resistance RON,SP to enable SiC DMOSFETs to compete in the 600–1,800 V regime, where the market demand is large.