40 Gb/s optical modulation using monolithically chain integration of semiconductor optical amplifiers (SOA) and electroabsorption modulators (EAM)

A 40 Gbs/s monolithically cascaded integration of SOAs and EAMs is fabricated and demonstrated. Using cascaded SOA-integrated EAM, 20 dB high extinction ratio in 2.5 V, 13 dB optical gain is observed in such device. As low as -10 dB microwave reflection (DC to 35 GHz) is observed, leading to 40 GHz of -3 dB bandwidth and 40 Gb/s performance.