Investigation of voltage overshoots in diode triggered silicon controlled rectifiers (DTSCRs) under very fast transmission line pulsing (VFTLP)

Overshoot voltages during VFTLP testing of DTSCRs are investigated. The DTSCRs in a 65 nm process turn on at approximately 500 ps. The overshoot voltages from DTSCRs are shown to cause gate oxide failures when gate oxide monitors were added in parallel to DTSCR ESD devices. Scaling trends show DTSCRs turning on at approximately 150 ps when technologies are scaled down to the 32 nm node.