Understanding LER-induced statistical variability: A 35,000 sample 3D simulation study

We study, in detail, statistical threshold voltage variability in a state of the art n-channel MOSFET introduced by line edge roughness. A large sample of 35,000 transistors with microscopically different LER patterns was simulated using the Glasgow 3D `atomistic' device simulator. Such large-scale simulation has been enabled by advanced grid computing technology. The results show that the statistical distribution of threshold voltage due to LER is asymmetric. Detailed analysis of the simulation results provide in depth understanding of the physical mechanisms governing LER induced statistical variability.