Si ICL based Si3N4 passivation on InAlAs surface of InP-HEMT by RPECVD system

As a promising device for high speed communication, HEMT has got many intention. But, it is long way to field-application of HEMT because of instability of the device. Especially, surface of InP-HEMT¹ (InAlAs) is very unstable and bandgap of InP is narrower than conventional GaAs-HEMT, so kink effect is very severe consequently. Si ICL(Inter Control Layer) based SiN passivation² for GaAs-HEMT has been suggested before, and I applied it to the InP-HEMT passivation process. It showed that Si ICL based passivation was more effective for reducing surface state.