Laser beam induced current of photodiodes formed on vacancy-doped and As-doped HgCdTe

Laser beam induced current measurements were used to study photovoltaic arrays formed on Hg vacancy-doped and As-doped HgCdTe materials at temperatures of 300 K and 87 K. For As-doped sample, the great difference of the diffusion length at two different temperatures can be explained by the mixed conduction behavior at 87 K, and the peak-to-peak width has an expansion of 10 mum from 300 K to 87 K, which can be ascribed to the graded junction by ion implantation.