The effects of local disorder on the electronic structures of amorphous semiconductor GaAs

The structure of amorphous compound semiconductor has been constructed successfully by ldquocontinuous random networksrdquo (CRN). Based on the first-principles calculations, the effects of different local disorder on density of states are studied in detail. The results show that the wrong bonds mainly have effect on the deeper energy band and introduce new electron states, and the dangling bonds mainly influence on the edge of energy gap and provide new electron states. In addition, anion and cation disorders (wrong bonds or dangling bonds) have distinguishing effect on density of states.