A SiGe:C BiCMOS LNA for 60GHz band applications

A new differential LNA dedicated to 60 GHz band has been implemented in a 130 nm BiCMOS technology intended for millimeter-waves (mm-Waves) applications. Focusing on the circuit implementation which is a critical design step in mm-Waves range, this work proposes a systematic modeling of layout parasitic elements leading to almost perfectly fit measurement and simulation results. The two stage cascode LNA achieves a 21.14 dB maximum peak of power gain at 61.5 GHz. Measured 1 dB compression point is -21.2 dBm, whereas the minimum simulated noise figure is 4.3 dB at 60 GHz. Power consumption is 10.2 mW for the circuit core. This building block is also presented as a specific example of a complete design flow for mm-Waves applications.