Monte Carlo Study of Ambipolar Transport and Quantum Effects in Carbon Nanotube Transistors

In this paper, we investigate the device operation of CNFETs using Monte Carlo simulation. Two types of contacts (ohmic and Schottky) are considered and the effect of ambipolar transport with Schottky barriers is analysed. We also discuss the actual influence of quantum effects on the basis of Wigner simulation results. The output and high-frequency characteristics of different structures are presented and discussed.