The effect of deep trench isolation, trench isolation and sub-collector doping on the electrostatic discharge (ESD) robustness of radio frequency (RF) ESD STI-bound P+/N-well diodes in BiCMOS silicon germanium technology

This paper demonstrates the independent and combined effect of deep trench (DT) isolation, trench isolation (TI), and sub-collector on shallow trench isolation (STI) -bound p+/n-well ESD diode structures in a 120 and 200 GHz f_T BiCMOS Silicon Germanium technology.