Partially Depleted SOI body-contacted MOSFET-triggered silicon controlled rectifier for ESD protection

This paper introduces a new efficient SCR ESD protection structure, with both polysilicon gates and body-contacts, in a partially depleted SOI technology. It is shown that a low triggering voltage is obtained thanks to MOSFET triggering, while a low leakage current in the off state can be achieved by biasing PWELL body and the MOSFET gate.