The improving characteristics for RF LDMOS with insulating layer

A novel power RF LDMOS with buried insulating layer structure is proposed. The characteristics of the proposed device become obviously better, due to the parasitic capacitance smaller than that of the conventional. The power output characteristics and the breakdown behavior are analyzed and simulated, and the results show that the drain-substrate capacitance of the N+PBIL LDMOS is 91.5% lower than that of the conventional LDMOS. At 1 dB compression point, its output power gain is 49.9% higher than that of the conventional LDMOS. The power-added efficiency increases from 32.1% for the conventional one to 42.2% for the proposed structure. Moreover the breakdown voltage of the proposed structure is 21% more than that of the conventional one.