Effect of floating island thickness and doping concentration in power FLIMOS: 2-D simulation study

Device simulations are applied to find out the effects of floating island thickness (dF) and doping concentration (Np+) in power floating island MOSFET (FLIMOS). The simulation results show that the specific on-resistance (Ron·sp) increases by enlarging dF while Np+ produce little influence on Ron·sp; When Np+ is low, the breakdown voltage (Vbr) improves by enlarging dF; When Np+ is high, the breakdown voltage (Vbr) degrades by enlarging dF.