10 W Class AB power amplifier design for UMTS applications using GaN HEMT

This paper exhibits a 10 W class AB highly linear power amplifier (PA) for a frequency of 2.14 GHz using GaN HEMT. Power and linearity measurements and simulations illustrate stupendous correspondence. An output power of 11 W (41 dBm) with maximum drain efficiency (eta) of 72 % (PAE 56 %) is achieved. Linearity measurements were made with a frequency spacing of 100 KHz and output third-order and second-order intercept points (OIP3 and OIP2) were observed to be 48 dBm and 80 dBm respectively.