Self-aligned SOI MOSFETs with Ω-shaped conductive layer and source/drain-tie

In this paper, we propose a novel self-aligned silicon-on-insulator (SOI) MOSFET with Ω-shaped conductive layer and source/drain-tie (SA-ΩCFET). Based on the TCAD 2D simulation results, we find that combining the applications of a nature Source/Drain (S/D) tie with a recessed S/D region can effectively improve the issue of self-heating effects, but without losing control of the short-channel effects. Moreover, owing to the presence of the thick S/D junction thickness the parasitic S/D series resistance is reduced thus our proposed structure can gain a higher drain on-current and a higher maximum transconductance as compared with the conventional UTSOI device.