Interface stability of metal/InP based material systems

The stability of interfaces between metal (Ni, Pt, Ti, Mo) and III-V compound semiconductors has been investigated by the application of Rutherford backscattering spectrometry (RBS). Metal diffusion and interfacial lattice disorder of the semiconductors were analyzed for various metal/semiconductor samples annealed at temperatures up to 500/spl deg/C. The interfaces of Ni/GaAs and Ti/GaAs were found to be stable compared to those of Ni/In-based semiconductors and Ti/In-based semiconductors, respectively. Faster diffusion of Pt atoms was observed in In- and As- containing materials than in P-containing materials. Mo/semiconductors were most stable.