Photoconductivity and photoluminescence of Cu diffused p-InP

Photoconductivity and photoluminescence measurements were carried out on Cu diffused p-InP in the temperature range 70 K-350 K and 10 K-140 K respectively. With 35 mW/cm/sup 2/ He-Ne laser radiation a high value of I/sub ph//I/sub d/=2.6J10/sup 5/ was obtained at 200 K which decreased to 800 at 300 K. The Cu related emission band was obtained at 1.216 eV. From the line-shape and line-width analysis of the emission spectrum the vibrational energy for the ground and excited states were found to be 38 and 14 meV respectively. The configuration co-ordinate diagram of the defect was calculated which showed a small lattice relaxation.