Evolution of non-equilibrium intrinsic defects in indium phosphide during the zinc diffusion from polymer spin-on films

To follow the evolution of non-equilibrium intrinsic defects (NID), particular emphasis has been placed on the poorly studied initial diffusion stage (IDS) that corresponds to the time interval needed to increase the temperature from room temperature to the diffusion one. The generation and relaxation of NID can manifest themselves in a change of mechanical properties of semiconductors as well as in an accumulation of more stable and extended defects such as dislocations and stacking faults as well as S-pits. The comparison studies of distribution profiles of defects and Zn atoms obtained after both IDS and the final diffusion stage (FDS) were carried out. Moreover, to evaluate the role of NID in the Zn diffusion into InP, the Zn distribution profiles were analyzed in accordance with the calculation for GaAs performed in the context of the kick-out mechanism.