InP-based HEMTs for microwave and millimeter-wave applications

This paper focuses primarily on the development in our laboratory of InP-based HEMTs for high frequency analog applications, and, where possible, our work is placed in the context of the industry at large. Perhaps the single most significant new development reported is the increase in device f/sub max/ to a value of 600 GHz. Current activity on InP HEMTs is aimed at improving device reliability, developing devices with higher power and efficiency, integrating low noise and power devices into monolithic microwave integrated circuits (MMICs) and improving the producibility of InP HEMT devices and MMICs.