Tbulk-BICS: A built-in current sensor robust to process and temperature variations for SET detection

This paper presents a parameterized current sensor able to detect transient ionization in the silicon substrate. Each sensor is controlled by a set of trimming bits that can be used to attune the sensitivity of the sensor while compensate process and temperature variations. Electrical simulation results show that the use of this parameterized sensor can increase the number of transistors monitored by a single sensor and at the same time maintain the efficiency in SET detection.