High-density 3-D metal-fuse PROM featuring 1.37µm2 1T1R bit cell in 32nm high-k metal-gate CMOS technology

A 4Kbit high-density PROM array design featuring a high-volume manufacturable metal-fuse technology in 32nm high-k metal-gate CMOS is introduced. In contrast to a traditional salicided polysilicon based 2-D fuse cell, the metal-fuse technology enables a 3-D cell topology with program device and fuse element stacked on each other, achieving a 1.37µm² cell footprint. The 128-row by 32-column array with an asymmetric tunable static sense scheme can operate down to 0.5V and provides multi-bit programming capability. A 100% programming success rate at 2V-1µs condition is achieved along with security protection.