A subthreshold current model for short channel InP MESFETs

Modeling the subthreshold current of MESFETs becomes very important to VLSI designers. An analytical two-dimensional model for the subthreshold current in InP MESFETs is presented. The model takes into account the short-channel effects on the barrier between the source and the drain, which may cause the device to conduct while it is believed to be cut-off. Obtained results are compared to those published for similar GaAs MESFETs. Comments and discussions are provided.