Advanced technologies for enhancing drive current of high-density transistors

We review the advanced technologies available for enhancing drive current of the high-density planar FETs. From the theoretical expression of the saturation current of the FET, the technologies are categorized into four groups; (1) scaling inversion gate dielectric thickness, (2) mobility enhancement, (3) steep lateral profile of the source/drain extension, and (4) reduction of parasitic resistance. Feasibility of various techniques for each group is comprehensively discussed.