Ku-band AlGaN/GaN-HEMT with over 30% of PAE

AlGaN/GaN high electron mobility transistors (HEMTs) were improved for X-band and Ku-band applications. The power added efficiency (PAE) was achieved over 40% for X-band and over 30% for Ku-band. The developed devices combined two AlGaN/GaN HEMTs of 12 mm gate periphery and exhibited the output power of over 50 W. An AlGaN/GaN HEMT with four dies of 12 mm gate periphery was developed and exhibited the output power of over 120 W.