Implemention of linear doping profiles for high voltage thin-film SOI devices

In this paper, a novel approach is proposed to obtain a linear doping profile for the implementation of lateral high voltage devices on thin-film Silicon-On-Insulator (SOI). The linear doping profile is obtained by using a lateral variation doping technique. In this technique, a smeared-out dopant distribution is implemented through the use of a sequence of small opening slits in the oxide mask with subsequent impurity implantation and drive-in processes. To understand the effect of the location and size of the oxide slits on the final doping profile, an one-dimensional analytical model is developed. Moreover, a computer program has also been developed to facilitate the slit parameters optimization. Validity of the model and the program has been verified by performing extensive two-dimensional process and device simulations.