A trench-gate injection enhanced lateral IEGT on SOI

This paper reports, for the first time, that lateral IGBTs with an injection enhanced multiple trench gate structure (LIEGT) on SOI successfully achieved both a low forward voltage drop and a high switching speed. The current density of LIEGTs with two trench gates is more than twice as large as that of conventional lateral IGBTs on a 10 /spl mu/m SOI. Closely spaced deep trench gates result in carrier storage under the trench gates and enhance lateral carrier flow. Although the switching speed of 10 /spl mu/m SOI LIEGTs is as fast as that of LIGBTs, its switching loss can be reduced. Thus, the electrical characteristics of lateral trench gate IEGTs on SOI are quite good.