The dual-gate BRT

In this paper, a new device concept called the Dual-Gate Base Resistance controlled Thyristor (DG-BRT) is reported. The DG-BRT combines the low forward drop characteristic of MOS-gated thyristors with a good forward biased safe operating area (FBSOA). When positive bias is applied to both gates, the DG-BRT operates in the thyristor mode allowing current conduction with a low forward voltage drop. When one gate is biased positive and the other negative, the DG-BRT can saturate current to high voltages. Results of two-dimensional numerical simulations and measurements performed on devices with forward blocking of 600 V are presented here.