Generation and annihilation of interface states under alternate hot electron/hole injection in SOI MOSFET's

The sequential front/back stressing technique was recently shown to be a powerful tool for studying hot-carrier degradation mechanisms in SOI MOSFETs. In this paper we use this technique, coupled with charge pumping, to analyze the effect of alternate electron/hole injection on interface states in SOI MOSFETs. Since this technique employs pure hot majority carrier injection from the opposite channel, the effect of electron and hole injections can be studied independent of each other. We observe that interface state creation takes place at the front interface following both electron injection and hole injection.