Modeling and operation analysis of a Three-terminal heterojunction bipolar phototransistor

Phototransistors have many applications in Integrated Optic Receivers. In this paper, analysis of noise reactions in a Heterojunction Bipolar Transistor (HBT) which is used in the form of Three-terminal (3T) photodetector, has been presented. In this research, S/N ratio in output, noises and main parameters have been considered. This model can be used for InP/InGaAs characteristics which in the form of optical detector in 1.55 um wave-length region.