High frequency noise in deep-submicron NMOSFETs under different hot carrier stresses

Degradation mechanisms contributing to the increased high frequency noise of deep-submicrometer NMOSFETs after different hot-carrier (HC) stresses are investigated. It is demonstrated that device noise parameters, such as NFmin and Rn degrade most under maximum substrate-current (IB,max) stress. On the other hand, hot electron and hot hole injection have much lower degradation on device noise performance. The high frequency noise degradation is mainly attributed to the additional channel noise associated with HC induced interface traps.