Development of porous silica ultra low-k films for 32 nm-node interconnects and beyond

Porous silica spin-on dielectrics (SOD) films with low dielectric constant (k ~ 2.0), high Young's modulus (E ~ 7.5 GPa), and small pores (~ 0.2 nm) were obtained only with ultraviolet (UV) curing within 1min at 350degC but without hydrophobic treatment process. Optimized UV curing condition and composition of precursor solution can give the low-k film applicable to 32 nm-node interconnect tech.nology and beyond.