A new technology for Si microwave power transistor manufacturing

We, for the first time, demonstrate a new process for Si power transistor manufacturing. The new process, combining the HMIC process and flip-chip process, completely changes the Si power transistor internal matching circuits design and manufacturing. S-band Si power transistor was used as a testing vehicle and under pulse operation condition. Pout=23 W with 7.9 dB of gain and 39% of efficiency were obtained at f=3.05 GHz and Vcc=36 V.