79GHz integrated antenna on low resistivity Si BiCMOS exploiting above-IC processing

This paper analyses the antenna implementation on BiCMOS technology. A dipole antenna, working at 79 GHz, is implemented and manufactured. The radiation simulated results reveal low gain (-6.8 dBi with IE3D and -8.5 with FEKO) and low radiation efficiency (8.9% with IE3D, 10.39% with FEKO), as expected. Classical techniques to optimise these performances require complex fabrication process. An alternative solution based on ldquomaskingrdquo technique is presented offering low cost and good performance advantages. In this way, +2.65 dBi of gain and 37% of radiation efficiency are obtained with an antenna implemented on BiCMOS technology with post-IC processing.