Suspended membrane inductors and capacitors for application in silicon MMIC's

This paper considers the fabrication and modelling of suspended membrane inductors and capacitors on ordinary silicon substrates. A single post-processing etching step was added to an otherwise standard process. For both components, parasitic capacitances to ground are drastically reduced, enabling high frequency operation. Furthermore, the measured quality factor Q is demonstrably improved with respect to normally fabricated thin film components.