Process dependence of the capacitance of silicon microstrip detectors

Strip capacitance is an important parameter in determining the noise performance of silicon microstrip systems. For LHC tracking applications, the combined requirements of short shaping time and low power consumption for the readout electronics strongly emphasise this fact. Significant differences in strip capacitances from different processes have been observed on a range of both p-side and n-side devices, and the results are presented here.