Preliminary results obtained from novel CdZnTe pad detectors

CdZnTe pad detectors with a novel geometry and approximately 1 mm/sup 2/ pad sizes is being developed. These detectors have been specially designed for high energy resolution up to 300 keV energies. The contacts are produced through a unique technique developed by eV Products to achieve high reliability low resistance coupling to the substrate. A ceramic carrier is developed for low capacitance coupling of the detectors to NOVA's FEENA chip. The detectors have been tested using the ultra low noise single and 3-channel amplifiers developed by eV Products. The CdZnTe detectors are tested for dark current. The charge energy resolutions and collection times are also measured using natural radiation sources. The measured detector parameters and the test results are showing that linear pad arrays can have good uniformity and excellent application potential for imaging X-rays and gamma-rays. The results obtained for the energy resolution is excellent for spectroscopy applications in nuclear physics and the short charge collection time can be used for fast imaging.