Reduction of secondary defects and diffusion of B atoms in BF/sub 2/-implanted Si(100) by ion-beam defect engineering

The effects of ion beam defect engineering (IBDE) in BF/sub 2/-implanted silicon have been studied. It has been shown that IBDE technique may be useful in the improvement of the properties of BF/sub 2/ implanted silicon. Reduction of secondary defects in BF/sub 2/ doped region and the anomalous diffusion of B atoms was observed if a buried amorphous layer was introduced by MeV Si ion irradiation prior to annealing.