Design of vertical power MOSFETs in SiC

Vertical MOSFETs have a good performance for high-power applications. However, silicon high-voltage devices run into a high on-resistance and a current limit due to the quasi-saturation regimen. Based on the intrinsic material properties, both of these limitations are notably improved in vertical MOSFETs made on SiC compared to those made on Si. In addition, SiC is more appropriate for high temperature operation. In this paper these aspects have been analyzed by simulation in order to compare the performance of SiC devices with that of Si devices and to establish the best operation range for each material.