Study of oxide field and electron energy dependence of interface-state generation in MOS structure by electron injection from Al gate and Si substrate

Interface-state generation in an MOS structure under internal photoemission (IPE) electron injection was studied. The investigation was focused on the applied oxide field and injected electron energy dependence of interface-state generation during IPE injection of electrons from both the Al gate and the Si substrate. An asymmetric polarity dependence of interface degradation was found by varying the oxide field and illuminating photon energy.