An extractor for 3-D parasitic capacitance and resistance

In the development of integrated circuits, parasitic parameters associated with interconnections affect the circuit speeds and functionality greatly in the case of sub-micron process. Many works have been done on the efficient calculation of these parameters. In this paper, a three-dimensional parasitic capacitance extractor is presented. The Boundary Element Method (BEM) is employed to deal with the Laplace's equation. The simulations and the comparisons showed that the experimental results are excellent agreement with the measured ones, and our extractor is effective in simulation of 3-D parasitic capacitances.