Characteristics of ultrathin dielectric films (<5 nm) grown or annealed in a nitric oxide ambient using rapid thermal processing

In this paper we report on the physical properties, such as thickness measurements and XPS depth profiles, and electrical properties of NO-grown gate dielectrics and compare them with films of similar thicknesses grown in N/sub 2/O and O/sub 2/. The interface state densities, interface state generation rate during electrical stress, charge trapping properties and stress induced leakage current are presented. In addition, electrical and physical properties of NO-annealed oxides which had an initial oxide and then were annealed in nitric oxide are included.